Large interband second-order susceptibilities in InxGa12xN/GaN quantum wells
نویسندگان
چکیده
We present measurements of second-harmonic generation in interband transitions of InxGa12xN/GaN multiple quantum well samples. The second-order susceptibility x (2) is studied as a function of pump wavelength and quantum well width. For the narrowest wells, we obtain x (2) 51.360.4310 m/V, which is an order of magnitude larger than the intrinsic value for bulk GaN. The corresponding power conversion efficiency was 6.3310. An enhancement of the nonlinearity due to strong internal piezoelectric fields could not be observed. © 1999 American Institute of Physics. @S0003-6951~99!04049-8#
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